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Mapping the effects of crystal defects

Tue, 03/14/2017

Our work on quantum dislocations is highlighted at U.S. Department of Energy (DOE), Office of Science Homepage!

 along with MIT Homepage. By developing a theoretical framework of quantized dislocations, a number of materials properties affected by dislocations can be studied at a unified, microscopic level.

Comments from Prof. David Singh: “Dislocations have profound effects on properties of materials, but until now the long-range nature of the strain field has prevented direct calculations of dislocation effects. The quantization developed in this paper goes a long way to solving these problems. I expect that this new formalism will lead to greatly improved understanding of the effects of dislocations on the electrical and thermal properties of materials. This work is a major step forward.